Memory cell array including ferroelectric capacitors, method...

Details Memory cell array including ferroelectric capacitors, method... Memory cell array including ferroelectric capacitors, method...

2005-08-16

2005-08-16

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104

Reexamination Certificate

active

06930340

ABSTRACT:
A memory cell array is provided that includes ferroelectric capacitors with enhanced characteristics, a method of making the same, and a ferroelectric memory device including the memory cell.In a memory cell array, memory cells including ferroelectric capacitors are arrayed in a matrix. Each ferroelectric capacitor includes a lower electrode, an upper electrode, and a ferroelectric section disposed between the lower electrode and the upper electrode. The ferroelectric section is disposed in an intersection between the lower electrode and the upper electrode. An intermediate electrode is disposed between the ferroelectric section14and the upper electrode.

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