Static information storage and retrieval – Read/write circuit – Noise suppression
Reexamination Certificate
2009-05-01
2011-10-25
Nguyen, Viet (Department: 2827)
Static information storage and retrieval
Read/write circuit
Noise suppression
C365S226000, C365S228000, C326S021000
Reexamination Certificate
active
08045410
ABSTRACT:
A complementary field-effect (CMOS) circuit is provided which includes a current-limiting device arranged along a power-supply bus or a ground bus of the circuit The current-limiting device is configured to prevent latch up of the CMOS circuit. More specifically, the current-limiting device is configured to maintain a junction of the parasitic pnpn diode structure as reverse-biased. A method is also provided which includes creating a current-voltage plot of a pnpn diode arranged within a first CMOS circuit which is absent of a current-limiting device arranged along a power bus of the circuit. In addition, the method includes determining a holding current level from the current-voltage plot and sizing a current-limiting device to place along a power bus of a second CMOS circuit comprising similar design specifications as the first CMOS circuit such that the current through the second CMOS circuit does not exceed the holding current level.
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Kapre Ravindra M.
Sharifzadeh Shahin
Cypress Semiconductor Corporation
Nguyen Viet
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