Memory cell array

Details Memory cell array Memory cell array

1997-08-29

1998-09-08

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257368, 257390, 257401, 257506, 257776, H01L 2972

Patent

active

058048545

ABSTRACT:
The memory cell array of the present invention has a plurality of memory cell, four memory cells hold a junction region in common. In the each memory cell, a portion of the tunnel oxide layer overlapped with the junction region is thinner than the other portion so that an individual programming operation of the each memory cell can be performed and an integration density of device can be increased.

REFERENCES:
patent: 5352619 (1994-10-01), Hong

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