Memory cell and wordline driver for embedded DRAM in ASIC proces

Details Memory cell and wordline driver for embedded DRAM in ASIC proces Memory cell and wordline driver for embedded DRAM in ASIC proces

1997-01-23

1997-12-02

Zarabian, A.

Static information storage and retrieval

Systems using particular element

Capacitors

36518911, 365226, G11C 700

Patent

active

056943555

ABSTRACT:
A DRAM charge storage structure including of a p-channel access FET in an n.sup.- doped well of a p.sup.- doped substrate, a p.sup.- channel charge storage capacitor, conductive apparatus connecting a gate of the charge storage capacitor to a drain of the FET, and apparatus for applying a boosted word line voltage to a gate of the FET.

REFERENCES:
patent: 4439692 (1984-03-01), Beekmans
patent: 4591738 (1986-05-01), Bialas

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