Memory cell and wordline driver for embedded DRAM in ASIC proces

Static information storage and retrieval – Systems using particular element – Capacitors

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36518911, 365226, G11C 700

Patent

active

056943555

ABSTRACT:
A DRAM charge storage structure including of a p-channel access FET in an n.sup.- doped well of a p.sup.- doped substrate, a p.sup.- channel charge storage capacitor, conductive apparatus connecting a gate of the charge storage capacitor to a drain of the FET, and apparatus for applying a boosted word line voltage to a gate of the FET.

REFERENCES:
patent: 4439692 (1984-03-01), Beekmans
patent: 4591738 (1986-05-01), Bialas

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