Memory cell and semiconductor memory device having thereof...

Details Memory cell and semiconductor memory device having thereof... Memory cell and semiconductor memory device having thereof...

2008-09-03

2010-10-26

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S230050

Reexamination Certificate

active

07821815

ABSTRACT:
Conventional semiconductor memory devices have a problem of a data read failure caused by a leak current. To address this problem, a semiconductor memory device of the present invention including memory cells each formed of a transfer transistor, a load transistor and a drive transistor. Each of the memory cells includes: a first transfer transistor connected to a connection point of the drive transistor and the load transistor; a second transfer transistor connected between the first transfer transistor and a bit line DB; and a compensation transistor connected between a constant voltage node and a connection point of the first transfer transistor and the second transfer transistor. The compensation transistor is switched to a conductive state exclusively from at least one of the first transfer transistor and the second transfer transistor.

REFERENCES:
patent: 6370078 (2002-04-01), Wik et al.
patent: 6707708 (2004-03-01), Alvandpour et al.
patent: 6856555 (2005-02-01), Fujimoto
patent: 7504695 (2009-03-01), Martelloni et al.
patent: 7577014 (2009-08-01), Yamagami
patent: 2004/0190351 (2004-09-01), Fujimoto
patent: 2004-288306 (2004-10-01), None

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