Memory cell and semiconductor memory device

Details Memory cell and semiconductor memory device Memory cell and semiconductor memory device

2006-02-21

2006-02-21

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S117000, C365S063000, C365S065000, C365S109000

Reexamination Certificate

active

07002835

ABSTRACT:
Aspects of the invention can prevent delay in output timing of inverted data for each of ferroelectric capacitors, there can be provided NMOSs that can electrically connect upper electrodes of the ferroelectric capacitor with a plate line and electrically connect lower electrodes of the ferroelectric capacitor with bit lines. Further there can be provided NMOSs that can electrically connect the lower electrodes of the ferroelectric capacitor with the plate line, and electrically connect the upper electrodes of the ferroelectric capacitor with bit lines.

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patent: 02002298573 (2002-10-01), None

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