Memory cell and semiconductor integrated circuit device

Details Memory cell and semiconductor integrated circuit device Memory cell and semiconductor integrated circuit device

2007-10-23

2007-10-23

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S230060

Reexamination Certificate

active

11330140

ABSTRACT:
A memory cell includes a memory cell section and a switching section. The memory cell section includes first and second inverters which are connected to form a flip-flop, and each of the first and second inverters comprises a load transistor and a drive transistor. The switching section is connected with a word line and configured to operatively disconnect the drive transistors of the first and second inverters from a power source when the word line is driven.

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patent: 6975532 (2005-12-01), Kosonocky et al.
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patent: 2002-32990 (2002-01-01), None
patent: 2002-42476 (2002-02-01), None

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