Memory cell and read circuit

Details Memory cell and read circuit Memory cell and read circuit

1988-10-31

1991-02-19

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

365177, 365190, 36523005, G11C 1100, G11C 1134, G11C 700, G11C 800

Patent

active

049950010

ABSTRACT:
The present invention relates to a memory cell, and more particularly to a single-bit, dual-port cell, and a single-sided read circuit for use with one or more such cells. The cell may, in one embodiment, be used in a static random access memory (RAM) array, and may be implemented in BICMOS technology on an integrated circuit. The cell has a flip-flop storage unit comprising a CMOS circuit of cross-coupled inverters coupled to dual CMOS pass gates to provide isolation and data transfer. The storage unit is also coupled to a bipolar read line driver in a particular configuration to accomplish rapid bit line pull-up or pulldown for high speed read operation. Several alternative embodiments are disclosed.

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