Memory cell and method for forming the same

Details Memory cell and method for forming the same Memory cell and method for forming the same

2008-01-29

2008-01-29

Pham, Ly Duy (Department: 2827)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S174000, C365S205000, C365S207000, C365S230010, C257S300000, C257S302000, C257S330000, C257S407000, C257S412000

Reexamination Certificate

active

07324367

ABSTRACT:
A semiconductor memory cell structure having 4 F2dimensions and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, a semiconductor post formed on the surface of the substrate over the active region and a capacitor is formed on the semiconductor post. A vertical access transistor having a gate structure formed on the semiconductor post is configured to electrically couple the respective memory cell capacitor to the active region when accessed.

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