Memory cell and a memory device having reduced soft error

Details Memory cell and a memory device having reduced soft error Memory cell and a memory device having reduced soft error

1995-09-18

1996-06-04

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Flip-flop

365181, 257297, G11C 1100

Patent

active

055239668

ABSTRACT:
Disclosed is a static type memory cell with high immunity from alpha ray-induced soft errors. The memory cell has a coupling capacitance C.sub.c between two data storage nodes 1 and 2. The p-well (or p-substrate) in which the driver-MOS transistors MN3, MN4 and the transfer MOS transistors MN1, MN2 are formed is connected to a V.sub.bb generator. The voltage V.sub.bb is set lower than the low level V.sub.L of the memory cell signal potential. Even when the potential variation .DELTA.V.sub.L of the low-voltage side node 2 is large, the parasitic diode present between the n-type diffusion layer corresponding to the source or drain of MN1-MN4 and the p-well (or p-substrate) does not turn on. Erroneous operations can therefore be prevented.

REFERENCES:
patent: 4130892 (1978-12-01), Gunckel, II et al.
patent: 4287574 (1981-09-01), Uchida
patent: 4805148 (1989-02-01), Diehl-Nagle et al.
Digest of Technical Papers of 1988 Symposium on VLSI Circuits, Aug. 22-24, 1988 (IEEE Cat. No. 88 Th 0227-9), pp. 51-52.
Influences on Soft Error Rates in Static RAMS'S--IEE Journal of Solid -State Circuits. vol. SC-22, No. 3, Jun. 1987 (430-436).

Affiliated with

Also associated with

Rating

Memory cell and a memory device having reduced soft error does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell and a memory device having reduced soft error, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell and a memory device having reduced soft error will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-389385