Memory cell

Details Memory cell Memory cell

1996-10-24

1998-07-21

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257306, 257309, 257308, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

057838488

ABSTRACT:
A memory cell having a storage capacitor structure which increases the capacitance by adding surface area to the storage electrode of the capacitor. A transfer transistor with a gate electrode and source-drain electrode areas is formed on a semiconductor substrate. An insulating layer is formed on the semiconductor substrate and the transfer transistor, which has a contact opening exposing one of the source-drain electrode areas as a contact area. A storage capacitor is formed on the insulating layer and electrically coupled to the contact area. The storage capacitor includes a first conductive layer with a vertical frame and at least one horizontal plate. The vertical frame is coupled to the contact area through the contact opening and one of the at least one horizontal plates has a plurality of extending areas which extend out vertically. The vertical frame, the at least one horizontal plate and the extending areas together form the storage electrode of the storage capacitor. A dielectric layer is formed on the first conductive layer. A second conductive layer which acts as an opposed electrode of the capacitor is formed on the dielectric layer.

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