Memory cell

Static information storage and retrieval – Systems using particular element – Semiconductive

Patent

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Details

357 40, G11C 1140

Patent

active

044609795

ABSTRACT:
An electrically erasable, programmable read-only-memory cell compatible with a high voltage value generator for writing and erasing in the cell being in the same chip.

REFERENCES:
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4257056 (1981-03-01), Shum
patent: 4263664 (1981-04-01), Owen et al.

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