Memory cell

Details Memory cell Memory cell

2006-10-06

2009-06-30

Dinh, Son (Department: 2824)

Static information storage and retrieval

Read/write circuit

C365S189150

Reexamination Certificate

active

07554856

ABSTRACT:
A method of reading memory includes sensing a plurality of memory cells simultaneously and providing a data signal corresponding to one of a plurality of programming states. The plurality of programming states include a number of programming states equal to twice a number of memory cells in the plurality of memory cells. The data signal is processed, providing binary data representative of the data signal. The binary data includes a number of information bits equal to the number of memory cells.

REFERENCES:
patent: 6240032 (2001-05-01), Fukumoto
patent: 7193898 (2007-03-01), Cernea
patent: 2005/0232024 (2005-10-01), Atir et al.
patent: 10 2005 017 828 (2005-12-01), None

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