Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1996-12-17
1998-11-03
Nelms, David C.
Static information storage and retrieval
Systems using particular element
Flip-flop
365156, G11C 1100
Patent
active
058318968
ABSTRACT:
A five transistor memory cell, is a single ended static random access memory (SRAM) cell. Reading and writing from the cell is implemented with one bit line along with word line read and word line write signals. One of the transistors within the memory cell is not coupled directly to ground, but is instead coupled to a controlled impedance node. This permits the affected transistor to float between ground and a high impedance state, which permits one bit line to write into the memory cell.
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Lattimore George McNeil
Leasure Terry Lee
Yeung Gus Wai-Yan
England Anthony V. S.
International Business Machines - Corporation
Kordzik Kelly K.
Nelms David C.
Phan Trong
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