Static information storage and retrieval – Read/write circuit – Simultaneous operations
Patent
1996-09-10
1997-03-18
Nguyen, Tan T.
Static information storage and retrieval
Read/write circuit
Simultaneous operations
365201, G11C 700
Patent
active
056129165
ABSTRACT:
A bypass mode for an SRAM permitting data to be coupled from the write drivers to the sense amplifier without being written into the cells. The bypass mode is used during testing and is implemented by simultaneously activating the write drivers and sense amplifiers while inhibiting selection of any of the cells in the array. In effect the bitlines in the array are used as bus lines for directly coupling data through the array. The bypass mode eliminates the need for the lines used to couple a bit pattern to a compare circuit during testing thereby saving substrate cover.
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Intel Corporation
Nguyen Tan T.
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