Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-07-10
2010-02-16
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002, C365S148000
Reexamination Certificate
active
07663134
ABSTRACT:
An array includes a transistor cpmprising a first terminal, a second terminal and a third terminal; a first contact plug connected to the first terminal of the transistor; a second contact plug connected to the first terminal of the transistor; a first resistive memory cell having a first end and a second end, wherein the first end is connected to the first contact plug; and a second resistive memory cell having a third end and a fourth end, wherein the third end is connected to the second contact plug.
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Hwang Jiunn-Ren
Lee Tzyh-Cheang
Liang Chun-Sheng
Yang Fu-Liang
Budd Paul A
Jackson, Jr. Jerome
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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