Memory array of a non-volatile RAM

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S100000, C365S148000

Reexamination Certificate

active

07149108

ABSTRACT:
Non-volatile memory cell with a single semiconductor device per memory cell. The present invention generally allows for a plurality of memory cells to be formed on a semiconductor substrate that supports a semiconductor device. A multi-resistive state material layer that changes its resistive state between a low resistive state and a high resistive state upon application of a voltage pulse is formed above the substrate, generally at a very high temperature. While the layers fabricated between the substrate and the multi-resistive state material use materials that can withstand high temperature processing, the layers fabricated above the multi-resistive state material do not need to withstand high temperature processing.

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