Memory array having a layer with electrical conductivity...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S532000, C257S296000, C257S255000, C257S301000, C257S623000, C365S151000, C365S117000

Reexamination Certificate

active

07026676

ABSTRACT:
A memory array includes a memory layer that has hysteretic domains with domain axes extending between first and second memory layer surfaces. A conductive layer on the first memory layer surface has anisotropically increased electrical conductivity in a thickness direction. A movable conductive probe has a contact area on the conductive layer and moves to access a selected hysteretic domain.

REFERENCES:
patent: 6111284 (2000-08-01), Sakurai
patent: 6284654 (2001-09-01), Roeder et al.
patent: 6728093 (2004-04-01), Fox
patent: 2003/0008418 (2003-01-01), Eason et al.
patent: 2003/0047764 (2003-03-01), Joo
patent: 2003/0157734 (2003-08-01), Engelhardt et al.
patent: 2003/0201475 (2003-10-01), Uchiyama et al.
patent: 2004/0016952 (2004-01-01), Sawasaki
patent: 2004/0071924 (2004-04-01), Yang et al.
“The Millipede-Nanotechnology Entering Data Storage,”IEEE Transactions on Nanotechnology, vol. 1, No. 1, Mar. 2002; pp. 39-55.
“A Survey of Circuit Innovations in Ferroelectric Randon-Access Memories,”Proceedings of the IEEE, vol. 88, No. 5, May 2000; pp. 667-689.

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