Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-11
2006-04-11
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000, C257S296000, C257S255000, C257S301000, C257S623000, C365S151000, C365S117000
Reexamination Certificate
active
07026676
ABSTRACT:
A memory array includes a memory layer that has hysteretic domains with domain axes extending between first and second memory layer surfaces. A conductive layer on the first memory layer surface has anisotropically increased electrical conductivity in a thickness direction. A movable conductive probe has a contact area on the conductive layer and moves to access a selected hysteretic domain.
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Ahner Joachim Walter
Weller Dieter Klaus
Yu Jun
Nelms David
Nguyen Tram H.
Seagate Technology LLC
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