Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-03-07
2008-08-05
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185050, C365S104000
Reexamination Certificate
active
07408806
ABSTRACT:
A high integration memory array architecture of the present invention includes a memory cell array including memory cells arranged in a predetermined configuration, and selection transistors having different threshold voltages so as to select a memory string of the memory cell array. By applying a proper bias voltage to the selection transistors, specific memory strings can be selected, so that operations for the memory array can be performed without intervening with adjacent memory cells.
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Choi Jung-Dal
Park Ki-Tae
Marger & Johnson & McCollom, P.C.
Nguyen Dang T
Samsung Electronics Co,. Ltd.
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