Memory array

Details Memory array Memory array

2004-02-04

2010-10-19

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S209000, C257S646000

Reexamination Certificate

active

07816722

ABSTRACT:
A memory array has a multiplicity of row conductors and a multiplicity of column conductors, the row conductors and column conductors being arranged to cross at cross-points, and has a memory cell disposed at each cross-point, each memory cell having a storage element and a control element coupled in series between a row conductor and a column conductor, and each control element including a silicon-rich insulator. Methods for fabricating the memory array are disclosed.

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