Memory array

Details Memory array Memory array

2006-07-04

2006-07-04

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

C365S185050, C365S185260

Reexamination Certificate

active

07072210

ABSTRACT:
A memory array including a plurality of word lines, a plurality of first source/drain lines, a plurality of second source/drain lines, and a plurality of memory units. Each memory unit includes a gate electrode coupled to one of the word lines, a first source/drain region coupled to one of the first source/drain lines or first bit lines, a second source/drain region coupled to one of the second source/drain lines or second bit lines, a first spacer between the first source/drain region and the gate electrode to store electrons or electric charges, and a second spacer between the second source/drain region and the gate electrode to store electrons or electric charges.

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