Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2006-09-15
2008-08-12
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S185240, C365S207000
Reexamination Certificate
active
07411812
ABSTRACT:
An architecture, and its method of formation and operation, containing a high density memory array of semi-volatile or non-volatile memory elements, including, but not limited to, programmable conductive access memory elements. The architecture in one exemplary embodiment has a pair of semi-volatile or non-volatile memory elements which selectively share a bit line through respective first electrodes and access transistors controlled by respective word lines. The memory elements each have a respective second electrode coupled thereto which in cooperation with the bit line access transistors and first electrode, serves to apply read, write and erase signals to the memory element.
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Gilton Terry L.
Moore John T.
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Nguyen Tuan T
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