Memory apparatus

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S195000

Reexamination Certificate

active

10573460

ABSTRACT:
A memory chip includes a main memory cell; a row-wise redundant memory cell and a column-wise redundant memory cell for relieving a defect existing in the main memory; an identification number designation terminal for storing an identification number corresponding to the main memory cell; an address terminal for receiving the identification number; and a redundant row selector circuit and a redundant column selector circuit for performing allocation so as to replace a defective memory space of the main memory cell with a memory space of the redundant memory cells. The redundant selector circuits allocate a memory space corresponding to the defect of the main memory cell to the redundant memory cells when the identification number received from the address terminal coincides with the identification number of the identification number specification terminal.

REFERENCES:
patent: 5446692 (1995-08-01), Haraguchi et al.
patent: 5469390 (1995-11-01), Sasaki et al.
patent: 5544113 (1996-08-01), Kirihata et al.
patent: 6188618 (2001-02-01), Takase
patent: 2002/0024062 (2002-02-01), Nakahara et al.
patent: 7-085691 (1995-03-01), None
patent: 7-85961 (1995-03-01), None
patent: 11-250691 (1999-09-01), None
patent: 2002-25292 (2002-01-01), None
patent: 2003-163326 (2003-06-01), None
U.S. Appl. No. 10/545,511 related to International Application No. PCT/JP2004/001430, International filing date Feb. 10, 2004, 93 total pages.
U.S. Patent Application No. Not Yet Assigned related to International Application No. PCT/JP2004/007377, U.S. filing date Nov. 28, 2005, 130 total pages. (Preliminary claim amendment and Amendment Under Article 19 attached).
International Preliminary Report of Patentability mailed on Jul. 6, 2006 for International Patent Application No. PCT/JP2004/013960 filed Sep. 24, 2004, six pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3766783

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.