Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2011-03-15
2011-03-15
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S185230, C365S226000, C365S201000, C365S154000
Reexamination Certificate
active
07907457
ABSTRACT:
A memory and a voltage monitoring device thereof are provided. the voltage monitoring device of the memory includes a system voltage detector, a charge pump circuit and a data output unit. The system voltage detector is coupled to the charge pump circuit and the data output unit for detecting a system voltage and thereby producing control signals. The charge pump circuit can produce a word line voltage according to the above-mentioned control signals. The data output unit decides outputting the above-mentioned control signals or the output data of the memory according to a special command, wherein the control signals correspond to the word line voltages. Therefore, the control signals and the word line voltages may be easily monitored.
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J.C. Patents
Nguyen Tuan T
Reidlinger R Lance
Winbond Electronics Corp.
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