Memory and method of fabricating the same

Details Memory and method of fabricating the same Memory and method of fabricating the same

2008-07-31

2010-02-16

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000, C257SE27091, C257SE27096, C257SE29262, C257SE29274, C257SE29313, C257SE29318

Reexamination Certificate

active

07663184

ABSTRACT:
A memory and a method of fabricating the same are provided. The memory is disposed on a substrate in which a plurality of trenches is arranged in parallel. The memory includes a gate structure and a doped region. The gate structure is disposed between the trenches. The doped region is disposed at one side of the gate structure, in the substrate between the trenches and in the sidewalls and bottoms of the trenches. The top surface of the doped region in the substrate between the trenches is lower than the surface of the substrate under the gate structure by a distance, and the distance is greater than 300 Å.

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