Static information storage and retrieval – Read/write circuit – Signals
Patent
1998-08-11
2000-03-21
Phan, Trong
Static information storage and retrieval
Read/write circuit
Signals
36523006, G11C 700, G11C 800
Patent
active
060409983
ABSTRACT:
An apparatus and method are disclosed for activating a memory location within a memory device. In an apparatus aspect of the invention, a memory device is disclosed. The memory device includes an enable unit arranged to receive a plurality of address signals and a clock signal and to output an activation signal. The address signals has an associated worst case delay, and the enable unit is further arranged to generate an enable signal that is delayed from the clock signal by at least about the worst case delay. The memory device further includes a memory array arranged to receive the activation signal in response to which a corresponding memory location is activated.
REFERENCES:
patent: 4425633 (1984-01-01), Swain
patent: 5500818 (1996-03-01), Chang et al.
patent: 5530677 (1996-06-01), Grover et al.
patent: 5652732 (1997-07-01), Shah
patent: 5835421 (1998-11-01), Pham et al.
patent: 5844857 (1998-12-01), Son et al.
Afsar Muhammad
Hung Chih-Teng
Mattela Venkat
Singh Balraj
Sung Chih-Ta Star
Phan Trong
Siemens Aktiengesellschaft
LandOfFree
Memory activation devices and methods does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory activation devices and methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory activation devices and methods will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-735531