Memory accessing circuit and method

Details Memory accessing circuit and method Memory accessing circuit and method

2008-06-10

2010-06-15

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07738289

ABSTRACT:
The present invention relates to a memory accessing circuit, which is for accessing a memory circuit with 2Nimpedance states. The memory accessing circuit includes a testing signal generating circuit, for generating a testing signal by detecting the impedance state of the memory circuit; a reference signal generating circuit, for generating 2N−1reference signals by detecting the impedance states of a reference circuit having 2N−1impedance paths; a median signal generating circuit, for generating (2N−1)−1, median signals by receiving the 2N−1reference signals; and a comparing circuit, for comparing the testing signal and the (2N−1) median signals. The present invention further provides a memory accessing method thereof.

REFERENCES:
patent: 6778428 (2004-08-01), Joo
patent: 6791887 (2004-09-01), Hung et al.

Affiliated with

Also associated with

Rating

Memory accessing circuit and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory accessing circuit and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory accessing circuit and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4238792