Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1997-07-22
1999-01-19
Nelms, David
Static information storage and retrieval
Read/write circuit
Differential sensing
365208, 365104, G11C 702
Patent
active
058620915
ABSTRACT:
A memory accessible in read mode only comprises storage elements designed to contain a bit that can assume two levels. Each memory cell comprises a transistor. The transistor of the storage element may include an associated circuit portion to prompt a short circuit between the drain and the source of the transistor if the storage element has to contain one bit at one of the two levels. Furthermore, the use of an unbalanced differential amplifier permits an improvement of the access time of the memory.
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patent: 5515327 (1996-05-01), Matsukawa et al.
Patent Abstracts of Japan, vol. 009, No. 118 (E-136), May 23, 1985, JP 60009157.
IBM Technical Disclosure Bulletin, vol. 26, No. 10a, Mar. 1984, pp. 5252-5255.
Bion Thierry
Ferrant Richard
Le Thong
Nelms David
SGS-Thomson Microelectronics S.A.
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