Memory

Details Memory Memory

2007-08-28

2007-08-28

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000, C365S189011, C365S210130

Reexamination Certificate

active

11229763

ABSTRACT:
A memory capable of easily setting a reference potential and correctly determining data is provided. This memory comprises a ferroelectric capacitor holding data, and a driving line and a data line linked with the ferroelectric capacitor. The memory applies a voltage pulse to the ferroelectric capacitor through the driving line when reading the data thereby generating a negative potential on the data line if the ferroelectric capacitor holds first data, or generating a positive potential on the data line if the ferroelectric capacitor holds second data.

REFERENCES:
patent: 6088257 (2000-07-01), Jeon et al.
patent: 6229728 (2001-05-01), Ono et al.
patent: 6356475 (2002-03-01), Tamura et al.
patent: 2002/0097618 (2002-07-01), Ohno et al.
patent: 2000-67597 (2000-03-01), None
patent: 2001-210795 (2001-08-01), None
patent: 10-0326991 (2002-02-01), None
patent: 10-2004-0028738 (2004-04-01), None
patent: WO 02/086905 (2002-10-01), None
Korean Office Action issued in corresponding Korean Patent Application No. KR 10-2005-0088738, dated Nov. 20, 2006.

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