Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-07-17
2007-07-17
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S194000
Reexamination Certificate
active
11228215
ABSTRACT:
A memory capable of performing a refresh operation without increasing current consumption is provided. This memory comprises a plurality of memory cells storing data, a delay circuit outputting a first address signal corresponding to the memory cells received from outside for a normal access operation with a delay of a prescribed period, a refresh control circuit outputting a second address signal corresponding to any of the memory cells subjected to a refresh operation of the data and a switching circuit switching and outputting the first address signal output from the delay circuit and the second address signal output from the refresh control circuit.
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Office Action for Corresponding Application No. 10-2005-88546, Dispatch Date: Jul. 27, 2006.
McDermott Will & Emery LLP
Phung Anh
Sanyo Electric Co,. Ltd.
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