Memory

Details Memory Memory

2007-07-31

2007-07-31

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189040, C365S227000

Reexamination Certificate

active

11024688

ABSTRACT:
A memory capable of suppressing disturbance causing disappearance of data from a nonselected memory cell is provided. This memory applies a second voltage of polarity reverse to that of a first voltage applied to a nonselected memory cell in a read operation to at least the nonselected memory cell in addition to the read operation collectively performed on all memory cells connected to a selected word line.

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Sakai et al., “A Novel Access Scheme Suppressing Disturbance for a Cross-Point Type Ferroelectric Memory”, Symposium on VLSI Circuits Digest of Technical Papers, Session 13-2, p. 171-173 (Jun. 2003).

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