Memory

Details Memory Memory

2006-09-19

2006-09-19

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

07110279

ABSTRACT:
A memory capable of suppressing disturbance is provided. This memory activates each of a selected word line and a bit line corresponding to unrewritten storage means while keeping potential difference therebetween at a level not more than a prescribed value and differentiates the length of a period for applying a voltage for rewriting to each of the selected word line and a bit line corresponding to rewritten storage means from the length of a transition period of the potential of at least either the word line or the bit line corresponding to the unrewritten storage means when performing a rewrite operation on partial selected storage means or performing no rewrite operation on all selected storage means.

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