Memory

Details Memory Memory

2006-03-21

2006-03-21

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189090, C365S189011

Reexamination Certificate

active

07016217

ABSTRACT:
A memory capable of suppressing disturbance is provided. This memory comprises a bit line, a word line arranged to intersect with the bit line and first storage means connected between the bit line and the word line, and applies prescribed reverse voltages to at least non-selected first storage means connected to a non-selected word line substantially identical times respectively or substantially applies no voltage through a read operation and a rewrite operation.

REFERENCES:
patent: 6473329 (2002-10-01), Nakamura
patent: 6522572 (2003-02-01), Nakamura
patent: 6654273 (2003-11-01), Miwa et al.
patent: 10-064255 (1998-03-01), None
patent: 2001-0031598 (2001-04-01), None
patent: 99/26252 (1999-05-01), None
Office Action for Korean Patent Application No. 10-2003-0017086, mailed Sep. 12, 2005.

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