Memory

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S154000, C365S230030, C365S230060

Reexamination Certificate

active

07319606

ABSTRACT:
A memory capable of effectively reducing the chip size not only by sharing a read/write circuit but also by reducing a memory cell size is provided. This memory comprises a first memory cell array having a plurality of first memory cells, a second memory cell array having a plurality of second memory cells different in type from the first memory cells and a selection control circuit provided separately from the first memory cell array and the second memory cell array for controlling selection of either the first memory cell array or the second memory cell array.

REFERENCES:
patent: 4627035 (1986-12-01), Yashiro
patent: 4964078 (1990-10-01), Jandu et al.
patent: 4989185 (1991-01-01), Matsuo et al.
patent: 5305276 (1994-04-01), Uenoyama
patent: 5371711 (1994-12-01), Nakayama
patent: 5838610 (1998-11-01), Hashimoto
patent: 6122216 (2000-09-01), Dykes
patent: 6438024 (2002-08-01), Gold et al.
patent: 6480929 (2002-11-01), Gauthier et al.
patent: 6594169 (2003-07-01), Sakui
patent: 6614703 (2003-09-01), Pitts et al.
patent: 6680861 (2004-01-01), Kasai
patent: 6891742 (2005-05-01), Takano et al.
patent: 2002/0031005 (2002-03-01), Natori et al.
patent: 2002/0093864 (2002-07-01), Ooishi
patent: 2002/0159289 (2002-10-01), Senda et al.
patent: 2003/0235095 (2003-12-01), Inoue
patent: 2004/0047226 (2004-03-01), Gans et al.
patent: 2001-167584 (2001-06-01), None
patent: 2002-026283 (2002-01-01), None
patent: 03/009302 (2003-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2775296

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.