Memory

Details Memory Memory

2006-10-23

2008-10-21

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

07440307

ABSTRACT:
This memory comprises a bit line, a first word line and a second word line arranged to intersect with the bit line while holding the bit line therebetween and a first ferroelectric film and a second ferroelectric film, having capacitances different from each other, arranged between the bit line and the first word line and between the bit line and the second word line respectively at least on a region where the bit line and the first and second word lines intersect with each other. The bit line, the first word line and the first ferroelectric film constitute a first ferroelectric capacitor while the bit line, the second word line and the second ferroelectric film constitute a second ferroelectric capacitor, and the first ferroelectric capacitor and the second ferroelectric capacitor constitute a memory cell.

REFERENCES:
patent: 5495438 (1996-02-01), Omura
patent: 5668754 (1997-09-01), Yamashita
patent: 6046929 (2000-04-01), Aoki et al.
patent: 6094369 (2000-07-01), Ozawa et al.
patent: 6188600 (2001-02-01), Ishiwara
patent: 6288931 (2001-09-01), Kye et al.
patent: 7-122661 (1995-05-01), None

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