Memory

Details Memory Memory

2008-04-29

2008-04-29

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S203000

Reexamination Certificate

active

11328223

ABSTRACT:
A memory capable of suppressing reduction of a reading voltage in data reading regardless of dispersion in a manufacturing process is provided. This memory comprises charge storage means, a first field-effect transistor and data determination means. The memory sets a voltage between a control terminal and a remaining first terminal of the first field-effect transistor to a threshold voltage for bringing the first field-effect transistor into an OFF-state in the vicinity of a boundary state between ON- and OFF-states through the threshold voltage of the first field-effect transistor.

REFERENCES:
patent: 6023438 (2000-02-01), Tanaka et al.
patent: 6434039 (2002-08-01), Braun et al.
patent: 6487103 (2002-11-01), Yamamoto et al.
patent: 6661697 (2003-12-01), Yamamoto et al.
patent: 6970371 (2005-11-01), Summerfelt et al.
patent: 2002-133857 (2002-05-01), None

Affiliated with

Also associated with

Rating

Memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3931589