Memory

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S158000, C365S171000

Reexamination Certificate

active

10936593

ABSTRACT:
A memory capable of suppressing disturbance causing disappearance of data in a nonselected memory cell is provided. This memory comprises a memory cell array including a bit line, a word line arranged to intersect with the bit line and memory cells connected between the bit line and the word line, for accessing a selected memory cell thereby deteriorating a remanent polarization in an arbitrary memory cell and thereafter performing recovery for recovering all memory cells to remanent polarizations immediately after a write operation or remanent polarizations subjected to single application of a voltage applied to a nonselected memory cell in the access.

REFERENCES:
patent: 5550770 (1996-08-01), Kuroda
patent: 6356475 (2002-03-01), Tamura et al.
patent: 6473329 (2002-10-01), Nakamura
patent: 6522572 (2003-02-01), Nakamura
patent: 6717837 (2004-04-01), Hasegawa et al.
patent: 6795351 (2004-09-01), Sakai
patent: 2004/0022090 (2004-02-01), Hasegawa et al.
patent: 2004/0105297 (2004-06-01), Takano
patent: 2004/0109363 (2004-06-01), Hamada
patent: 2004/0174729 (2004-09-01), Sakai et al.
patent: 2005/0057958 (2005-03-01), Miyamoto et al.
patent: 2005/0152193 (2005-07-01), Sakai
patent: 2006/0067139 (2006-03-01), Sakai et al.
patent: 06-77434 (1994-03-01), None
patent: 6-77434 (1994-03-01), None
patent: 09-116107 (1997-05-01), None
patent: 10-162587 (1998-06-01), None
patent: 2001-210795 (2001-08-01), None
patent: 2001-0031598 (2001-04-01), None
patent: 99/26252 (1999-05-01), None
Japanese Office Action dated Jan. 30, 2007 w/translation.
Japanese Office Action dated Jan. 30, 2007 w/translation related to Japanese Appln. No. 2003-057179.
Japanese Office Action dated Jan. 30, 2007 w/translation related to Japanese Appln. No. 2004-050968.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3919349

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.