Memory

Details Memory Memory

2008-09-02

2008-09-02

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S158000, C365S171000

Reexamination Certificate

active

10936593

ABSTRACT:
A memory capable of suppressing disturbance causing disappearance of data in a nonselected memory cell is provided. This memory comprises a memory cell array including a bit line, a word line arranged to intersect with the bit line and memory cells connected between the bit line and the word line, for accessing a selected memory cell thereby deteriorating a remanent polarization in an arbitrary memory cell and thereafter performing recovery for recovering all memory cells to remanent polarizations immediately after a write operation or remanent polarizations subjected to single application of a voltage applied to a nonselected memory cell in the access.

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