Memory

Details Memory Memory

2011-04-26

2011-04-26

Le, Vu A (Department: 2824)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S149000, C365S196000

Reexamination Certificate

active

07933148

ABSTRACT:
A memory capable of suppressing reduction of data determination accuracy is provided. This memory includes a memory cell connected to a bit line for holding data and a bipolar transistor whose base is connected to the bit line. In data reading, the memory reads the data by amplifying a current, corresponding to the data of the memory cell, appearing on the bit line with the bipolar transistor.

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