Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2007-10-09
2007-10-09
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S417000
Reexamination Certificate
active
10547041
ABSTRACT:
A micromechanical sensor and a method for manufacturing a micromechanical sensor which has at least one membrane are provided. The membrane is made of a first material which is accommodated in a surrounding second material, and the membrane is configured for sensing a medium surrounding it. The membrane is reinforced, at least partly, by a third material at break-sensitive points on the membrane rim. Reinforcement of the membrane rim increases the stability and thus also the service life of the membrane and the sensor.
REFERENCES:
patent: 5705745 (1998-01-01), Treutler et al.
patent: 40 24 780 (1991-10-01), None
patent: 42 15 722 (1993-11-01), None
patent: 195 27 861 (1997-01-01), None
patent: 199 51 595 (2001-05-01), None
patent: 19951595 (2001-05-01), None
patent: 102 10 335 (2003-10-01), None
Bernhard Winfried
Duell Andreas
Fuertsch Matthias
Gruen Detlef
Hecht Hans
Ho Anthony
Jackson Jerome
Kenyon & Kenyon LLP
LandOfFree
Membrane sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Membrane sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Membrane sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3851332