Membrane dielectric isolation transistor fabrication

Details Membrane dielectric isolation transistor fabrication Membrane dielectric isolation transistor fabrication

1995-06-07

1997-01-07

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257329, 257419, 257508, 257663, H01L 2348, H01L 2700

Patent

active

055920071

ABSTRACT:
General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.

REFERENCES:
patent: 4070230 (1978-01-01), Stein
patent: 4131985 (1979-01-01), Greenwood et al.
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4618397 (1986-10-01), Shimizu et al.
patent: 4702936 (1987-10-01), Maeda et al.
patent: 4721938 (1988-01-01), Steveson
patent: 4784721 (1988-11-01), Holman et al.
patent: 4952446 (1990-08-01), Lee et al.
patent: 5071510 (1991-12-01), Findler
patent: 5110373 (1992-05-01), Mauger
patent: 5367189 (1994-11-01), Nakamara

Affiliated with

Also associated with

Rating

Membrane dielectric isolation transistor fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Membrane dielectric isolation transistor fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Membrane dielectric isolation transistor fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1766748