Membrane dielectric isolation IC fabrication

Details Membrane dielectric isolation IC fabrication Membrane dielectric isolation IC fabrication

1995-06-07

1999-08-31

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438149, 438283, H01L 2184

Patent

active

059465590

ABSTRACT:
General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.

REFERENCES:
patent: 4070230 (1978-01-01), Stein
patent: 4131985 (1979-01-01), Greenwood et al.
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4618397 (1986-10-01), Shimizu et al.
patent: 4702936 (1987-10-01), Maeda et al.
patent: 4721938 (1988-01-01), Steveson
patent: 4784721 (1988-11-01), Holmen et al.
patent: 4952446 (1990-08-01), Lee et al.
patent: 5071510 (1991-12-01), Findler et al.
patent: 5110373 (1992-05-01), Mauger

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