Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1997-10-23
1999-02-16
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117208, 117900, C30B 3500
Patent
active
058715827
ABSTRACT:
This invention provides a melt receiver for a semiconductor single-crystal manufacturing device, which is capable of protecting the main chamber from being damaged by the outflow of the melt or dropping of the debris of the broken crucibles and therefore preventing steam explosion. The melt receiver 1 is consisted of an adiabatic member 3 made of carbon fibers; a cover 2 made of high strength C/C material which shelters the surface of the adiabatic member 3; and a bottom plate 4. A groove 2a is formed on the upper surface of the cover 2. The groove 2a has a size capable of accommodating all of the melt stored in the quartz crucible 7. The melt flown out or articles dropped down due to damage of the crucible are received by the melt receiver 1, and the melt flown out can not reach the bottom of the main chamber 9. The melt receiver can also be consisted of a melt absorption layer made of adiabatic material, and a melt isolation layer made of graphite or high strength C/C material.
REFERENCES:
patent: 2977258 (1961-03-01), Dunkle
patent: 3033660 (1962-05-01), Okkerse
patent: 4659421 (1987-04-01), Jewett
patent: 4661200 (1987-04-01), Sachs
Garrett Felisa
Komatsu Electronic Metals Co. Ltd.
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