MEEF reduction by elongation of square shapes

Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Analysis and verification

Reexamination Certificate

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Details

C716S119000, C700S098000, C700S120000, C700S121000, C430S005000, C378S035000

Reexamination Certificate

active

07975246

ABSTRACT:
A method that purposely relaxes OPC algorithm constraints to allow post OPC mask shapes to elongate along one direction (particularly lowering the 1-dimensional MEEF in this direction with the result of an effectively overall lowered MEEF) to produce a pattern on wafer that is circular to within an acceptable tolerance.

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