Mechanism for uniform etching by minimizing effects of etch rate

Details Mechanism for uniform etching by minimizing effects of etch rate Mechanism for uniform etching by minimizing effects of etch rate

1996-05-30

1998-06-30

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Etching a multiple layered substrate where the etching...

216 67, 438714, 438740, H01L 21306

Patent

active

057729069

ABSTRACT:
A method for etching a layer stack structure on a substrate is provided. The method includes a step of etching the layer stack to a predefined stopping point using a reverse etch rate loading inducing chemistry. The method also includes a step of etching said layer stack through a target layer in the layer stack structure using a natural etch rate loading chemistry.

REFERENCES:
patent: 4980018 (1990-12-01), Mu et al.
patent: 5256245 (1993-10-01), Keller et al.
patent: 5326427 (1994-07-01), Jerbic
patent: 5411631 (1995-05-01), Hori et al.
patent: 5429070 (1995-07-01), Campbell et al.
patent: 5540812 (1996-07-01), Kadomura
patent: 5562801 (1996-10-01), Nulty
patent: 5620615 (1997-04-01), Keller
T. H. Ahn, S. W. Nam, K.J. Min, and C. Chung, "Effect of Residual Gases on Residue Formation during Tungsten/TiN/Ti Etching Using SF.sub.6 and Cl.sub.2 Gas Chemistry," Jpn. J. Appl. Phys. vol. 33 (1994) pp. L918-L920, Part 2, No. 7A, Jul. 1, 1994.

Affiliated with

Also associated with

Rating

Mechanism for uniform etching by minimizing effects of etch rate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mechanism for uniform etching by minimizing effects of etch rate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mechanism for uniform etching by minimizing effects of etch rate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1855647