Mechanism for preventing metallic ion contamination of a wafer i

Details Mechanism for preventing metallic ion contamination of a wafer i Mechanism for preventing metallic ion contamination of a wafer i

1998-03-04

1999-11-02

Westin, Edward P.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504922, 250398, 2504923, H01J 37244

Patent

active

059775530

ABSTRACT:
When employing conventional ion implantation equipment, the peripheral edge of the wafer is contaminated by metallic ions generated from the collision of the accelerated ion beam with the disk that supports the target, namely a wafer. The present invention provides a magnet for forming a magnetic field which will repel the generated metallic ions. The magnet is disposed on the disk and surrounds the wafer to prevent the metallic ions from impinging the wafer.

REFERENCES:
patent: 5293508 (1994-03-01), Shiratake et al.
patent: 5757018 (1998-05-01), Mack et al.

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