Mechanical supports for very thin stacked capacitor plates

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257306, 257309, H01L 27108

Patent

active

059819928

ABSTRACT:
A stacked capacitor having very thin fins and subminimum dimension supports for the fins is described. The capacitor includes a stack of conductive layers on a substrate. A plurality of subminimum dimension trenches are formed in the stack and a columnar conductive layer lines the trenches in contact with alternate layers of the stack. An insulator lines these alternate layers and the columnar conductive layer and capacifively couples these alternate layers and the columnar conductive layer to a second plate layer that is formed between the alternate layers, within the columnar layers in the trenches, and extending between stacked capacitors.

REFERENCES:
patent: 4119995 (1978-10-01), Simko
patent: 5077225 (1991-12-01), Lee
patent: 5108943 (1992-04-01), Sandhu et al.
patent: 5153813 (1992-10-01), Oehrlein et al.
patent: 5160987 (1992-11-01), Pricer et al.
patent: 5187548 (1993-02-01), Baek et al.
patent: 5254503 (1993-10-01), Kenney
patent: 5319246 (1994-06-01), Nagamine
patent: 5350707 (1994-09-01), Ko et al.
patent: 5464791 (1995-11-01), Hirota
Wolf et al., Silicon Processing fir the VLSI Era, Lattice Press, 1986, pp. 521-523.
"High density vertical DRAM cell", IBM technical disclosure bulletin, vol. 29, No. 5, p. 2335-2340.
"Fabrication of 64M Dram with i-Line Phase-Shift Lithography" IEDM 90-817, 33.1.1, 1990 IEEE.
"Rugged Surface Poly-Si Electrode and Low Temperature Deposited Si.sub.3 N.sub.4 For 64 MBIT and Beyond STC DRAM Cell" IEDM 90-659, 27.4.1, 1990 IEEE.
"Electrical Characterization of Textured Interpoly Capacitators for Advanced Stacked DRAMs", IEDM 90-663, 27.5.1, 1990 IEEE.
A Capacitor-Over-Bit-Line (COB) Cell With A Hemispherical-Grain Storage Node For 64Mb DRAMs M. Sakao, M. Kasai, T. Ishijima, E. Ikawa, H. Watanabe, K. Terada and T. Kikkawa Microelectronics Research Laboratories, NEC Corporation 1990 IEEE.
Mini-Trenches In Polysilicon For DRAM Storage Capacitance Enhancement IBM Corporation 1991 vol. 33 No. 9 Feb. 1991 IBM Technical Disclosure Bulletin .

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Mechanical supports for very thin stacked capacitor plates does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mechanical supports for very thin stacked capacitor plates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mechanical supports for very thin stacked capacitor plates will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1460109

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.