Mechanical enhancement of dense and porous organosilicate...

Details Mechanical enhancement of dense and porous organosilicate... Mechanical enhancement of dense and porous organosilicate...

2011-04-26

2011-04-26

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S099000, C438S795000, C257S040000, C257SE51012, C501S039000, C501S080000

Reexamination Certificate

active

07932188

ABSTRACT:
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

REFERENCES:
patent: 4603168 (1986-07-01), Sasaki et al.
patent: 5609925 (1997-03-01), Camilletti et al.
patent: 5935646 (1999-08-01), Raman et al.
patent: 5970384 (1999-10-01), Yamazaki et al.
patent: 6017806 (2000-01-01), Harvey
patent: 6042994 (2000-03-01), Yang et al.
patent: 6168980 (2001-01-01), Yamazaki et al.
patent: 6231989 (2001-05-01), Chung et al.
patent: 6284050 (2001-09-01), Shi et al.
patent: 6426236 (2002-07-01), Ishizaka et al.
patent: 6472076 (2002-10-01), Hacker
patent: 6495479 (2002-12-01), Wu et al.
patent: 6566278 (2003-05-01), Harvey et al.
patent: 6613834 (2003-09-01), Nakata et al.
patent: 6913796 (2005-07-01), Albano et al.
patent: 7041748 (2006-05-01), Lin et al.
patent: 7358316 (2008-04-01), Ko et al.
patent: 2001/0038919 (2001-11-01), Berry, III et al.
patent: 2001/0055891 (2001-12-01), Ko et al.
patent: 2002/0102413 (2002-08-01), Han et al.
patent: 2002/0106500 (2002-08-01), Albano et al.
patent: 2002/0132496 (2002-09-01), Ball et al.
patent: 2002/0142585 (2002-10-01), Mandal
patent: 2003/0003288 (2003-01-01), Nakata et al.
patent: 2003/0032300 (2003-02-01), Waldfried et al.
patent: 2003/0054115 (2003-03-01), Albano et al.
patent: 2003/0087042 (2003-05-01), Murakami et al.
patent: 2003/0151031 (2003-08-01), Li et al.
patent: 2003/0162034 (2003-08-01), O'Neill et al.
patent: 2003/0198742 (2003-10-01), Vrtis et al.
patent: 2003/0224622 (2003-12-01), Matsuki et al.
patent: 2003/0232137 (2003-12-01), Vrtis et al.
patent: 2004/0096593 (2004-05-01), Lukas et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
patent: 2005/0048795 (2005-03-01), Ko et al.
patent: 1458947 (2006-03-01), None
patent: 0 537 364 (1993-04-01), None
patent: 0 575 650 (1993-12-01), None
patent: 1 122 333 (2001-08-01), None
patent: 1122333 (2001-08-01), None
patent: 1 225 194 (2002-07-01), None
patent: 1 354 980 (2003-10-01), None
patent: 1482550 (2004-01-01), None
patent: 1 420 439 (2004-05-01), None
patent: 1 464 726 (2004-10-01), None
patent: 59124729 (1984-07-01), None
patent: 200351283 (2003-02-01), None
patent: 540118 (1990-03-01), None
patent: 9700535 (1997-01-01), None
patent: 0129052 (2001-04-01), None
patent: 0161737 (2001-08-01), None
patent: 02065534 (2002-08-01), None
patent: 03025993 (2003-03-01), None
patent: 03025994 (2003-03-01), None
patent: 2004083495 (2004-09-01), None
patent: 2005019303 (2005-03-01), None
Dixit, Girish, et al., “Film Properties and Integration Performance of a Nano-Porous Carbon Doped Oxide”, Applied Materials, Inc, Santa Clara, California, USA, International Interconnect Technology Conference, Jun. 2004.
E. G. Parada, et al., “Improvement of Silicon Oxide Film Properties by Ultraviolet Excimer Lamp Annealing,”Applied Surface Science 86, pp. 294-298 (1995).
A. Guo, et al., “Highly Active Visible-Light Photocatalysts for Curing a Ceramic Precursor,” Chem Mater. 10, pp. 531-536 (1998).
T. Clark, Jr., et al., “A New Application of UV-Ozone Treatment in the Preparation of Substrate-Supported, Mesoporous Thin Films,” Chem. Mater. 12, pp. 3879-3884 (2000).
M. Brinkmann, et al., “Room-Temperature Synthesis of a-Si02 Thin Films by UV-Assisted Ozonolysis of a Polymer Precursor,” Chem. Mater. 13, pp. 967-972 (2001).
A. Hozumi, et al., “Low-Temperature Elimination of Organic Components from Mesostructured Organic-Inorganic Composite Films Using Vacuum Ultraviolet Light,” Chem. Mater. 12, pp. 3842-3847 (2007).
M. Ouyang, et al., “Conversion of Some Siloxane Polymers to Silicon Oxide by UV/Ozone Photochemical Processes,” Chem. Mater. 12, pp. 1591-1596 (2000).
Q. Han, et al., “Ultra Low-k Porous Silicon Dioxide Films from a Plasma Process,” IEEE (2001), pp. 171-173.
C. Waldfried, et al., “Single Wafer RapidCuring TM of Porous Low-k Materials,” IEEE (2002), pp. 226-228.
Yokotani, A., et al; “A Single Precursor Photlitic Chemical Vapor Deposition of Silican Film Using a Dielectric Barier Discharge Xenon Excimer Lamp”; Applied Physics Letters, AIP, American Institute of Physics, Melville, NY; vol. 69, No. 10; Sep. 2, 1996; pp. 1399-1401; XP012016011.
Ykotani, A., et al; “A Single Precursor Photolitic Chemical Vapor Deposition of Silica Film Using a Dielectric Barier Discharge Xenon Excimer Lamp”; Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US; vol. 69, No. 10; Sep. 2, 1996; pp. 1399-1401; XP012016011.
Grill, A. et al; “Ultralow-K Dielectrics Prepared by Plasma-Enhanced Chemical Vapor Deposition”; Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US; vol. 79, No. 6; Aug. 6, 2001; pp. 803-805; XP012029992.
Wu, Z-C., et al; “Physical and Electrical Charcteristics of Methylsilane- and Trimethylsilane-Doped Low Dielectric Constant Chemical Vapor Deposited Oxides”; Journal of the Electrochemical Society, Electrochemical Society. Manchester, New Hampshire, US; vol. 148, No. 6; Jun. 1, 2001; pp. F127-F132; XP001058314.

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