Measuring integrity of semiconductor multi-layer metal structure

Details Measuring integrity of semiconductor multi-layer metal structure Measuring integrity of semiconductor multi-layer metal structure

1990-07-02

1991-09-17

Wieder, Kenneth A.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324 731, 324612, 324613, G01R 1512

Patent

active

050498118

ABSTRACT:
A fast, nondestructive, and low cost method for measuring the integrity of semiconductor multi-layer conducting structures uses a voltage spectral density technique. The method compares the magnitude and frequency of generally non-periodic low frequency voltages induced by direct current flow in test structures to the same parameters of a defect free structure.

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Smith et al., "Evaluating Voids and Microcracks in Al Metalization"; Semiconductor International; Jan. 1990.
Valdes; "About the Measurement and Interpretation of Low Frequency Noises"; Review of Scientific Instruments, vol. 61, No. 12, 1984.

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