Measuring detector and a method of fabrication of said detector

Details Measuring detector and a method of fabrication of said detector Measuring detector and a method of fabrication of said detector

1972-01-26

1977-09-13

Tupman, W.

Measuring and testing

Gas analysis

Moisture content or vapor pressure

29576B, 29573, 338 25, G01K 700

Patent

active

040474364

ABSTRACT:
The measuring detector is constituted by the resistance of a given volume of doped semiconductor, there being formed on one face of a semiconducting monocrystal a surface region having a well-determined thickness and a well-determined concentration of doping ions and two electrical contacts at the extremities of said region.
The doped surface region is obtained by ion implantation and there is formed on the second face of the monocrystal a metallic coating which has good thermal conductivity and is in good thermal contact with said second face.
The detector is primarily applicable to thermometric measurements at very low temperatures below 1.degree. K.

REFERENCES:
patent: 3141135 (1964-07-01), Amlinger
patent: 3411199 (1968-11-01), Heiman
patent: 3413531 (1968-11-01), Leith
patent: 3479234 (1969-11-01), Gray
patent: 3533158 (1970-10-01), Bower
patent: 3655457 (1972-04-01), Duffy
patent: 3665256 (1972-05-01), Goun
patent: 3747203 (1973-07-01), Shannon

Affiliated with

Also associated with

Rating

Measuring detector and a method of fabrication of said detector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Measuring detector and a method of fabrication of said detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Measuring detector and a method of fabrication of said detector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-266486