Optics: measuring and testing – For light transmission or absorption
Reexamination Certificate
2005-06-14
2005-06-14
Rosenberger, Richard A. (Department: 2877)
Optics: measuring and testing
For light transmission or absorption
Reexamination Certificate
active
06906801
ABSTRACT:
An apparatus measures a property of a layer (such as the sheet resistance of a conductive layer or thermal conductivity of a dielectric layer that is located underneath the conductive layer) by performing the following method: (1) focusing the heating beam on the heated a region (also called “heated region”) of the conductive layer (2) modulating the power of the heating beam at a predetermined frequency that is selected to be sufficiently low to ensure that at least a majority (preferably all) of the generated heat transfers out of the heated region by diffusion, and (3) measuring the power of another beam that is (a) reflected by the heated region, and (b) modulated in phase with modulation of the heating beam. The measurement in act (3) can be used directly as a measure of the resistance (per unit length) of a conductive line formed by patterning the conductive layer. Acts (1)-(3) can be repeated during fabrication of a semiconductor wafer, at each of a number of regions on a conductive line, and any change in measurement indicates a corresponding change in resistance of the line. When the measurement changes by more than a predetermined amount (e.g. by 10%), a process parameter that controls the fabrication process is changed to return the measurement to normal in the next wafer. Moreover, the thermal conductivity of the dielectric layer can be measured, or monitored for changes beyond a predetermined limit during a scan across the wafer, if resistance is known.
REFERENCES:
patent: 3462602 (1969-08-01), Apple
patent: 3909602 (1975-09-01), Micka
patent: 3930730 (1976-01-01), Laurens et al.
patent: 4243327 (1981-01-01), Frosch et al.
patent: 4255971 (1981-03-01), Rosencwaig
patent: 4455741 (1984-06-01), Kolodner
patent: 4466748 (1984-08-01), Needham
patent: 4468136 (1984-08-01), Murphy et al.
patent: 4521118 (1985-06-01), Rosencwaig
patent: 4522510 (1985-06-01), Rosencwaig et al.
patent: 4571685 (1986-02-01), Kamoshida
patent: 4579463 (1986-04-01), Rosencwaig et al.
patent: 4632561 (1986-12-01), Rosencwaig et al.
patent: 4634290 (1987-01-01), Rosencwaig et al.
patent: 4636088 (1987-01-01), Rosencwaig et al.
patent: 4679946 (1987-07-01), Rosencwaig et al.
patent: 4710030 (1987-12-01), Tauc et al.
patent: 4750822 (1988-06-01), Rosencwaig et al.
patent: 4795260 (1989-01-01), Schuur et al.
patent: 4854710 (1989-08-01), Opsal et al.
patent: 4950990 (1990-08-01), Moulder et al.
patent: 4952063 (1990-08-01), Opsal et al.
patent: 4975141 (1990-12-01), Greco et al.
patent: 4996659 (1991-02-01), Yamaguchi et al.
patent: 5042951 (1991-08-01), Gold et al.
patent: 5042952 (1991-08-01), Opsal et al.
patent: 5074669 (1991-12-01), Opsal
patent: 5149978 (1992-09-01), Opsal et al.
patent: 5159412 (1992-10-01), Willenborg et al.
patent: 5181080 (1993-01-01), Fanton et al.
patent: 5228776 (1993-07-01), Smith et al.
patent: 5408327 (1995-04-01), Geiler et al.
patent: 5430548 (1995-07-01), Hiroi et al.
patent: 5454004 (1995-09-01), Leger
patent: 5574562 (1996-11-01), Fishman et al.
patent: 5652716 (1997-07-01), Battersby
patent: 5657754 (1997-08-01), Rosencwaig
patent: 5667300 (1997-09-01), Mandelis et al.
patent: 5706094 (1998-01-01), Maris
patent: 5741614 (1998-04-01), McCoy et al.
patent: 5761082 (1998-06-01), Miura-Mattausch
patent: 5764363 (1998-06-01), Ooki et al.
patent: 5790251 (1998-08-01), Hagiwara
patent: 5877860 (1999-03-01), Borden
patent: 5883518 (1999-03-01), Borden
patent: 5966019 (1999-10-01), Borden
patent: 5978074 (1999-11-01), Opsal et al.
patent: 6049220 (2000-04-01), Borden et al.
patent: 6054868 (2000-04-01), Borden et al.
patent: 6081334 (2000-06-01), Grimbergen et al.
patent: 6154280 (2000-11-01), Borden
patent: 6169601 (2001-01-01), Eremin et al.
patent: 6211961 (2001-04-01), Maris
patent: 6268916 (2001-07-01), Lee et al.
patent: 6281027 (2001-08-01), Wei et al.
patent: 6323951 (2001-11-01), Borden et al.
patent: 6327035 (2001-12-01), Li et al.
patent: 6336969 (2002-01-01), Yamaguchi et al.
patent: 6395563 (2002-05-01), Eriguchi
patent: 6400454 (2002-06-01), Noguchi et al.
patent: 6426644 (2002-07-01), Borden et al.
patent: 6483594 (2002-11-01), Borden et al.
patent: 6486965 (2002-11-01), Kim
patent: 6489624 (2002-12-01), Ushio et al.
patent: 6489801 (2002-12-01), Borden et al.
patent: 6528333 (2003-03-01), Jun et al.
patent: 6559942 (2003-05-01), Sui et al.
patent: 6694284 (2004-02-01), Nikoonahad et al.
patent: 6734968 (2004-05-01), Wang et al.
patent: 2002/0126732 (2002-09-01), Shakouri et al.
patent: 2003/0155927 (2003-08-01), Pinto et al.
patent: 0 718 595 (1995-12-01), None
patent: 05006929 (1993-01-01), None
patent: 2000009443 (2000-01-01), None
patent: 97/08536 (1997-06-01), None
patent: 99/64880 (1999-12-01), None
Intl Prel Search Report PCT/US03/29993.
Jackson, “Classical Electrodynamics”, John Wiley & Sons, Inc., (month unavailable), 1967, pp. 222-226.
Rosencwaig et al. “Detection of Thermal Waves Through Optical Reflectance”, Appl Phys. Lett. 46, Jun. 1985, pp1013-1015.
Rosencwaig, “Thermal-Wave Imaging”, Science, vol. 218, No. 4569, Oct. 1982, pp. 223-228.
Opsal et al. “Thermal-Wave Detection and Thin-Film Thickness Measurements with Laser Beam Deflection”, Applied Optics, vol. 22, No. 20, Oct. 1983, pp. 3169-3176.
“Process Monitoring System,” Quantox Product Brochure, 3 pg, prior to Nov. 2003.
J. Kolzer et al “Thermal Imaging and Measurement Techniques for Electronic Materials and Devices” Microelectronic Engineering, vol. 31, 1996 (month unknown) pp. 251-270.
C. Martinsons et al. “Recent progress in the measurment of thermal properties of hard coatings” Thin Solid Films, vol. 317, Apr. 1998, 455-457.
S. Wolf and R. N. Tauber, “Silicon Processing For The VLSI Era”, vol. 1, 1986, pp. 388-399.
Yaozhi Hu and Sing Pin Tay, “Spectroscopic ellipsometry investigation of nickel silicide formation by rapid thermal process”, J. Vac. Sci. Technology, American Vacuum Soc. May/Jun. 1998, pp. 1820-1824.
Quality Today News, article entitled “In-Line Metrology SEM System with 3D Imaging” dated Jan. 10, 2000 and published at http://www.qualitytoday.com/Jan-00-news/011000-3.htm before Apr. 4, 2001.
Walter G. Driscoll and William Vaughan, “Handbook of Optics”, 1978, pp. 8-42, 8-43, 8-107, and 10-72 to 10-77.
Charles Kittel, “Introduction to Solid State Physics”, Fourth Edition, John Wiley & Sons, published prior to Mar. 1, 2002, pp. 262-264.
Rolf E. Hummel, “Electronic Properties of Materials, An Introduction For Engineers”, published prior to Mar. 1, 2002, pp. 137-145.
H.S. Carslaw and J.C. Jaeger, “Conduction of Heat In Solids”, Second Edition, published prior to Mar. 1, 2002, pp. 64-66.
A. Rosencwaig, “Thermal Wave Measurement of Thin-Film Thickness”, 1986 American Chemical Society, pp. 182-191.
A. Rosencwaig et al., “Thin-Film Thickness Measurements with Thermal Waves”, Journal de Physique, Oct. 1983, pp. C6-483 - C6-489.
W. L. Smith et al. “Thermal-wave Measurements and Monitoring of TaSIx Silicide Film Properties” J. Vac. Technol.B2(4), Oct.-Dec. 1984, pp. 710-713.
A. Salnick et al., “Nonlinear Fundamental Photothermal Response in 3D Geometry: Experimental Results for Tungsten”, (believed to be prior to Mar. 1, 2002).
S. Ameri et al., “Photo-Displament Imaging”, Mar. 30, 1981, pp. 337-338.
L. Chen et al., “Thermal Wave Studies of Thin Metal Films Using the Meta-Probe-A New Generation Photothermal System” 25th Review of Progress in QNDE, Snowbird, UT Jul. 19-24, 1998, pp 1-12.
P. Alpern and S. Wurm, “Modulated Optical Reflectance Measurements on Bulk Metals and Thin Metallic Layers”, J. Appl. Phys. 66(4), Aug. 15, 1989, pp 1676-1679.
J. Opsal, “The Application of Thermal Wave Technology to Thickness and Grain Size Monitoring of Aluminum Films”, SPIE vol. 1596 Metalization Performance and Reliability Issues for VLSI and ULSI (1991), pp 120-131.
Borden Peter G.
Li Jiping
Applied Materials Inc.
Rosenberger Richard A.
Silicon Valley Patent & Group LLP
LandOfFree
Measuring a property of a layer in multilayered structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Measuring a property of a layer in multilayered structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Measuring a property of a layer in multilayered structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3501454